Полевые МОП-транзисторы — купить со склада и под заказ
Категория
В каталоге ЭЛ-СИРИУС — 348 наименований категории «Полевые МОП-транзисторы» от ведущих производителей. Проверка наличия и цены онлайн по партномеру (MPN), поставка со склада и под заказ, доставка по России и СНГ. Работаем с юридическими лицами и частными покупателями.
| Партномер (MPN) | Наименование | Описание |
|---|---|---|
| 2N7002 | 2N7002 | N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω |
| 2N7002-HXY | 2N7002-HXY | |
| 2N7002,215 | 2N7002,215 | Power MOSFET, N Channel, 60 V, 300 mA, 2.8 Ohm , TO-236AB (SOT-23), 3 Pins, Surface Mount |
| 2N7002BKS,115 | 2N7002BKS,115 | Trans MOSFET N-CH 60V 0.3A Automotive 6-Pin TSSOP T/R |
| 2N7002DW | 2N7002DW | N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 2Ω |
| 2N7002DW H6327 | 2N7002DW H6327 | |
| 2N7002DW K72 | 2N7002DW K72 | 60V 115mA 200mW 7.5´Î@5V50mA 2V@250Ã×A 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS |
| 2N7002DW-7-F | 2N7002DW-7-F | Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R |
| 2N7002DW-7-F-JSM | 2N7002DW-7-F-JSM | |
| 2N7002DW-7-F-MS | 2N7002DW-7-F-MS | SOT-363 , 2N@@(Vdss), 60V@@(Id), 300mA@@(Pd), 280mW@@(RDS(on)@Vgs, Id), 1.8¦¸@10V, 300mA |
| 2N7002DW-7-F-VB | 2N7002DW-7-F-VB | 60V 350mA 1 N-Channel SC70-6 MOSFETs ROHS |
| 2N7002DW-7-G | 2N7002DW-7-G | MOSFET 2N-CH 60V SOT-363 / Mosfet Array |
| 2N7002DW-JSM | 2N7002DW-JSM | |
| 2N7002DW-TP | 2N7002DW-TP | Mosfet Array 2 N-Channel (Dual) 60V 115mA 200mW Surface Mount SOT-363 |
| 2N7002DW-TP-VB | 2N7002DW-TP-VB | TSMC wafer£¬JCET (Jiangsu Changjiang Electronics Technology)¡£NChannel, 60V, 0.35A, RDS(ON), 2000m¦¸@10V,... |
| 2N7002DW-VB | 2N7002DW-VB | 60V 2 N-Channel SC70-6 MOSFETs ROHS |
| 2N7002DW1T1G | 2N7002DW1T1G | |
| 2N7002DWH6327 | 2N7002DWH6327 | |
| 2N7002DWH6327-MS | 2N7002DWH6327-MS | SOT-363 , 2N@@(Vdss), 60V@@(Id), 300mA@@(Pd), 280mW@@(RDS(on)@Vgs, Id), 1.8¦¸@10V, 300mA |
| 2N7002DWH6327XT | 2N7002DWH6327XT | Compliant Surface Mount 1.25 mm 800 µm 2 mm 3.1 ns 3.3 ns SOT-363 |
| 2N7002DWH6327XTSA1 | 2N7002DWH6327XTSA1 | Mosfet, N-Ch, 60V, 0.3A, Sot-363 Rohs Compliant: Yes |Infineon Technologies 2N7002DWH6327XTSA1 |
| 2N7002DWK-7 | 2N7002DWK-7 | Transistor MOSFET Array Dual N-CH 60V 261mA 6-Pin SOT-363 T/R |
| 2N7002DWQ-13-F | 2N7002DWQ-13-F | Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 |
| 2N7002DWQ-7-F | 2N7002DWQ-7-F | Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R |
| 2N7002DWQ-7-F-VB | 2N7002DWQ-7-F-VB | TSMC wafer£¬JCET (Jiangsu Changjiang Electronics Technology)¡£NChannel, 60V, 0.35A, RDS(ON), 2000m¦¸@10V,... |
| 2N7002DWS-7 | 2N7002DWS-7 | Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R |
| 2N7002K-7 | 2N7002K-7 | DIODES INC. - 2N7002K-7 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V |
| 2N7002K-T1-GE3 | 2N7002K-T1-GE3 | 2N7002K Series N-Channel 60 V 2 Ohm 0.6 nC MosFet Surface Mount - SOT-23-3 |
| 2N7002T | 2N7002T | N-Channel MOSFET, Enhancement Mode, 60V, 115mA, 2Ω |
| 2SK3018 | 2SK3018 | Suitable for power switching and signal control |
| 8205A | 8205A | |
| DS2782E-C3+T&R | Analog Devices DS2782E-C3+T&R | Fuel Gauge Li-Ion/Li-Pol 8-Pin TSSOP T/R |
| AO3400 | AO3400 | SOT-23 ID=5.8A, VDS=30V |
| AO3400-ED | AO3400-ED | |
| AO3400-HXY | AO3400-HXY | 1.4W 12V 1INDIVIDUALNCHANNEL 30V 35M¦¸@ 10V, 5.8A 5.8A SOT-23(TO-236) SMD Mount |
| AO3400A | AO3400A | Trans MOSFET N-CH 30V 5.7A 3-Pin SOT-23 |
| AO3401 | AO3401 | Trans MOSFET P-CH 30V 4A 3-Pin SOT-23 |
| AO3401-ED | AO3401-ED | |
| AO3407A | AO3407A | Trans Mosfet P-ch 30V 4.3A 3-PIN SOT-23 / Mosfet P-ch 30V 4.3A SOT23 |
| AO4485 | AO4485 | Trans Mosfet P-ch 40V 10A 8-PIN SOIC T/r |
| AO4629 | AO4629 | Trans MOSFET N/P-CH 30V 6A/5.5A 8-Pin SOIC |
| AO6800-HXY | AO6800-HXY | |
| APT5010JVR | APT5010JVR | Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube |
| AUIRF540Z | AUIRF540Z | Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
| AUIRF540Z-VB | AUIRF540Z-VB | TSMC wafer£¬JCET (Jiangsu Changjiang Electronics Technology)¡£NChannel, 100V, 70A, RDS(ON), 17m¦¸@10V,... |
| AUIRF540ZPBF | AUIRF540ZPBF | |
| AUIRF540ZPBF-JSM | AUIRF540ZPBF-JSM | |
| AUIRF540ZPBF-VB | AUIRF540ZPBF-VB | N, 100V, 70A, Rds(on), 17M¦¸@10V, 20VGS(¡ÀV), 3.7VTH(V) , TO220 |
| AUIRF540ZSTRL | AUIRF540ZSTRL | MOSFET N-CH 100V 36A D2PAK / Trans MOSFET N-CH Si 100V 36A Automotive 3-Pin(2+Tab) D2PAK T/R |
| AUIRF540ZXKMA1-VB | AUIRF540ZXKMA1-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)¡£NChannel, 100V, 70A, RDS(ON), 17m¦¸@10V, 20Vgs(¡ÀV);... |
| AUIRF7640S2TR | AUIRF7640S2TR | Trans MOSFET N-CH Si 60V 5.8A Automotive 6-Pin Direct-FET SB T/R |
| B100NF03L-VB TO263 | B100NF03L-VB TO263 | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)¡£NChannel, 30V, 150A, RDS(ON), 2.3m¦¸@10V, 3.2m¦¸@4.5V,... |
| B100NF04 | B100NF04 | |
| B100NF04-VB | B100NF04-VB | N, 40V, 100A, Rds(on), 5M¦¸@10V, 6M¦¸@4.5V, 20VGS(¡ÀV), 1.8VTH(V) , TO263 |
| BIG MOSFET SLIDE SWITCH HP | BIG MOSFET SLIDE SWITCH HP | |
| BIG MOSFET SLIDE SWITCH MP | BIG MOSFET SLIDE SWITCH MP | |
| BSC034N10LS5ATMA1 | BSC034N10LS5ATMA1 | Power MOSFET, N Channel, 100 V, 100 A, 0.0034 ohm, TDSON, Surface Mount |
| BSC034N10LS5ATMA1-VB | BSC034N10LS5ATMA1-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)¡£DFN5X6-8L; NChannel; VDS=100V; ID =180A;... |
| BSC050N03LS G | BSC050N03LS G | |
| BSC050N03LS G-VB | BSC050N03LS G-VB | N-Ch MOSFET 30V 120A RDS(ON) 3mΩ@10V 5mΩ@4.5V Vgs ±20V Vth 1.79V DFN8(5X6) |
| BSC050N03LSG | BSC050N03LSG | |
| BSC050N03LSG-VB | BSC050N03LSG-VB | N, 30V, 120A, Rds(on), 3M¦¸@10V, 5M¦¸@4.5V, 20VGS(¡ÀV), 1.79VTH(V) N, Trench, DFN8(5X6) |
| BSC050N03LSGA | BSC050N03LSGA | |
| BSC050N03LSGATMA1 | BSC050N03LSGATMA1 | Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8 |
| BSC050N03LSGATMA1-HXY | BSC050N03LSGATMA1-HXY | |
| BSC050N03LSGATMA1-VB | BSC050N03LSGATMA1-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。DFN5X6; NChannel, 30V, 45A, RDS(ON)=4.4mΩ@10V, VGS=±20V,... |
| BSS123 | BSS123 | Transistor MOSFET Negative Channel 100 Volt 0.17A 3-Pin SOT-23 |
| BSS138 | BSS138 | Trans MOSFET N Channel 50 Volt 0.22A 3-Pin SOT-23 Tape and Reel |
| BSS138-7-F | BSS138-7-F | N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3 |
| BSS138-TP | BSS138-TP | BSS138 Series 50 V 0.22 A N-Ch. Enhancement Mode Field Effect Transistor -SOT-23 |
| BSS138DW | BSS138DW | Suitable for power switching and signal control |
| BSS84 | BSS84 | Transistor, Mosfet, P-channel, Small Signal Switch, 50V, 0.13A, SOT23 |
| BSZ16DN25NS3G | BSZ16DN25NS3G | |
| BSZ16DN25NS3GATMA1 | BSZ16DN25NS3GATMA1 | MOSFET N-CH 250V 10.9A 8TSDSON N-Channel 250 V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8 |
| BSZ42DN25NS3G | BSZ42DN25NS3G | |
| BSZ42DN25NS3GATMA1 | BSZ42DN25NS3GATMA1 | MOSFET N-CH 250V 5A TSDSON-8 N-Channel 250 V 5A (Tc) 33.8W (Tc) Surface Mount PG-TSDSON-8-2 |
| BSZ900N20NS3 G | BSZ900N20NS3 G | |
| BSZ900N20NS3 G-VB | BSZ900N20NS3 G-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。DFN8(3X3); NChannel, 200V; 18A; RDS(ON)=66mΩ@VGS=10V,... |
| BSZ900N20NS3G | BSZ900N20NS3G | |
| BSZ900N20NS3GATMA1 | BSZ900N20NS3GATMA1 | MOSFET N-CH 200V 15.2A 8TSDSON N-Channel 200 V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8 |
| BSZ900N20NS3GATMA1-VB | BSZ900N20NS3GATMA1-VB | TSMC wafer，JCET (Jiangsu Changjiang Electronics Technology)。DFN8(3X3)；NChannel；VDS=200V；ID... |
| CJ3401 | CJ3401 | 12V 9.4NC@ 4.5V 2INDIVIDUALPCHANNEL 650PF@25V 4.2A SOT-23 |
| CS10N60A8HD-VB | CS10N60A8HD-VB | N, 650V, 18A, Rds(on), 430M¦¸@10V, 20VGS(¡ÀV), 3.5VTH(V) , TO220- |
| CS10N80F | CS10N80F | |
| CS10N80FA9D | CS10N80FA9D | |
| CSD16401Q5 | CSD16401Q5 | 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150 |
| CSD16401Q5-VB | CSD16401Q5-VB | 30V, 160A, Rds(on), 1.8M¦¸@10V, 2.5M¦¸@4.5V, 20VGS(¡ÀV), 2VTH(V) , QFN8(5X6) N , - |
| CSD16401Q5(ES) | CSD16401Q5(ES) | |
| CSD16401Q5T | CSD16401Q5T | 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150 |
| DMG4466SSS-13 | Diodes Inc. DMG4466SSS-13 | Power MOSFET, N Channel, 30 V, 10 A, 0.015 ohm, SOIC, Surface Mount |
| DMG4496SSS-13 | Diodes Inc. DMG4496SSS-13 | Single N-Channel 30 V 29 mOhm 4.7 nC 1.42 W Silicon Mosfet - SOIC-8 |
| DMP4050SSS-13 | Diodes Inc. DMP4050SSS-13 | Power MOSFET, P Channel, 40 V, 4.4 A, 0.038 ohm, SOIC, Surface Mount |
| DMN30H4D0LFDE-7 | DMN30H4D0LFDE-7 | Power MOSFET, N Channel, 300 V, 550 mA, 2.3 ohm, U-DFN2020, Surface Mount |
| DMN6040SSD-13 | DMN6040SSD-13 | Transistor MOSFET Array Dual N-CH 60V 6.6A 8-Pin SOIC T/R |
| DMN62D0U-7 | DMN62D0U-7 | Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount |
| FDY3000NZ | Fairchild FDY3000NZ | Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 0.6A, 700mΩ |
| FDS5670 | FDS5670 | N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ |
| FDS86140 | FDS86140 | Single N-Channel 100 V 17 mOhm 41 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8 |
| H2N7002DW7F | H2N7002DW7F | |
| H2N7002DWS7 | H2N7002DWS7 | |
| 2N3955A | Harris 2N3955A | Small Signal Bipolar Transistor |
| HD2305 | HD2305 | 12V 4.1A 45mΩ@4.5V, 3.5A 350mW 900mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| IRLML2803 | Hottech IRLML2803 | Transistor: N-MOSFET; unipolar; 25V; 1.2A; 0.25ohm; 0.54W; -55+150 deg.C; SMD; SOT23 |
| IPW60R041P6 | Inchange Semiconductor IPW60R041P6 | |
| IRFP31N50L | Inchange Semiconductor IRFP31N50L | Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A) | MOSFET N-CH 500V 31A TO-247AC |
| IRL520NS | Inchange Semiconductor IRL520NS | MOSFET N-CH 100V 10A D2PAK "N-Channel 100 V 10A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK" |
| SPD02N50C3 | Inchange Semiconductor SPD02N50C3 | MOSFET N-CH 560V 1.8A TO252-3 N-Channel 560 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO252-3-11 |
| AUIRFU8403 | Infineon AUIRFU8403 | Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS |
| BSC042N03MSGATMA1 | Infineon BSC042N03MSGATMA1 | Transistor: N-MOSFET; unipolar; 30V; 82A; 57W; PG-TDSON-8 |
| BSC100N03MSGATMA1 | Infineon BSC100N03MSGATMA1 | Transistor: N-MOSFET; unipolar; 30V; 41A; 30W; PG-TDSON-8 |
| BSC120N03MSGATMA1 | Infineon BSC120N03MSGATMA1 | Single N-Channel 30 V 12 mOhm 15 nC OptiMOS Power Mosfet - TDSON-8 |
| BSO220N03MDGXUMA1 | Infineon BSO220N03MDGXUMA1 | Transistor MOSFET Array Dual N-CH 30V 7.7A 8-Pin DSO T/R |
| BSP149L6327 | Infineon BSP149L6327 | Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R |
| BSP149L6327HTSA1 | Infineon BSP149L6327HTSA1 | Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R |
| BSP149L6327XT | Infineon BSP149L6327XT | Trans MOSFET N-CH 200V 0.66A 4-Pin (3+Tab) SOT-223 T/R |
| BSS88E6296 | Infineon BSS88E6296 | Trans MOSFET N-CH 240V 0.25A 3-Pin TO-92 |
| BSZ035N03MSGATMA1 | Infineon BSZ035N03MSGATMA1 | Single N-Channel 30 V 3.5 mOhm 56 nC OptiMOS Power Mosfet - TSDSON-8 |
| BSZ050N03MSGATMA1 | Infineon BSZ050N03MSGATMA1 | Single N-Channel 30 V 4.5 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8 |
| BSZ100N03MSGATMA1 | Infineon BSZ100N03MSGATMA1 | Single N-Channel 30 V 9.1 mOhm 17 nC OptiMOS Power Mosfet - TSDSON-8 |
| IAUC70N08S5N074ATMA1 | Infineon IAUC70N08S5N074ATMA1 | Mosfet, Aec-Q101, N-Ch, 70A, Pg-Tdson-8 Rohs Compliant: Yes |Infineon IAUC70N08S5N074ATMA1 |
| IPB60R099CPATMA1 | Infineon IPB60R099CPATMA1 | Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount |
| IPW60R041P6FKSA1 | Infineon IPW60R041P6FKSA1 | IPW60R041P6 Series 600 V 77.5 A CoolMOS P6 Power Transistor - TO-247-3 |
| IRF3205SPBF | Infineon IRF3205SPBF | MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V |
| IRF3205STRLPBF | Infineon IRF3205STRLPBF | MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V |
| IRF3205STRPBF | Infineon IRF3205STRPBF | D2PAk MOSFETs ROHS |
| IRF3205STRRPBF | Infineon IRF3205STRRPBF | MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V |
| IRF6201PBF | Infineon IRF6201PBF | Mosfet, 20V, 27A, 2.5 Mohm, 130 Nc Qg, 2.5V Drive Capable, SO-8 |
| IRF6201TRPBF | Infineon IRF6201TRPBF | Mosfet, N Ch, 20V, 0.0019 Ohm, 27A, SOIC-8 |
| IRF6646TR1 | Infineon IRF6646TR1 | Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN T/R |
| IRF6646TR1PBF | Infineon IRF6646TR1PBF | Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN T/R |
| IRF6646TRPBF | Infineon IRF6646TRPBF | Single N-Channel 80 V 9.5 mOhm 50 nC HEXFET® Power Mosfet - DirectFET® |
| IRF7105 | Infineon IRF7105 | 25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
| IRF7105PBF | Infineon IRF7105PBF | Transistor MOSFET N P Channel 25 Volt 3.5 Amp-2.3 Amp 8 Pin SOIC |
| IRF7105QPBF | Infineon IRF7105QPBF | 25V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package |
| IRF7105QTRPBF | Infineon IRF7105QTRPBF | 25V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package |
| IRF7105TRPBF | Infineon IRF7105TRPBF | Trans Mosfet N/p-ch 25V 3.5A/2.3A 8-PIN SOIC T/r / Mosfet N/p-ch 25V 8-SOIC |
| IRF7105TRPBF-1 | Infineon IRF7105TRPBF-1 | 25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS |
| IRFH5053TRPBF | Infineon IRFH5053TRPBF | Single N-Channel 100 V 18 mOhm 24 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm |
| IRL2203NPBF | Infineon IRL2203NPBF | Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3 |
| IRL520NS | Infineon IRL520NS | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK |
| IRL520NSPBF | Infineon IRL520NSPBF | Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.18 Ohm; Id 10A; D2PAK; Pd 48W; Vgs +/-16V; -55D |
| IRL520NSTRL | Infineon IRL520NSTRL | 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| IRL520NSTRLPBF | Infineon IRL520NSTRLPBF | 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS |
| IRLML2803GTRPBF | Infineon IRLML2803GTRPBF | N CH POWER MOSFET, HEXFET, 30V, 1.2A, MICRO3; Transistor Polarity: N Channel; Con |
| IRLML2803TRPBF | Infineon IRLML2803TRPBF | Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.25 Ohm; Id 1.2A; MICRO3; Pd 540MW; Vgs +/-20V |
| IRLML2803TRPBF-1 | Infineon IRLML2803TRPBF-1 | Mosfet, 30V, 1.2A, 250 Mohm, 3.3 Nc Qg, Logic Level, SOT-23 |
| SPD02N50C3 | Infineon SPD02N50C3 | Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R |
| SPD02N50C3BTMA1 | Infineon SPD02N50C3BTMA1 | N-Channel 560 V 3 Ohm Cool MOS Power Transistor - PG-TO252-3 |
| SPD02N50C3XT | Infineon SPD02N50C3XT | Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) TO-252 |
| TZ240N36KOFS1 | Infineon TZ240N36KOFS1 | Silicon Controlled Rectifier |
| TZ240N36KOFS1HPSA1 | Infineon TZ240N36KOFS1HPSA1 | Mosfet N-ch 40V 75A Lfpak |
| TZ240N36KOFS2HPSA1 | Infineon TZ240N36KOFS2HPSA1 | Mosfet N-ch 40V 35.3A Lfpak |
| AUIRFU8403-701TRL | International Rectifier AUIRFU8403-701TRL | HEXFET Power MOSFET N-Channel 40V 100A 3-Pin TO-251AA T/R |
| IRF3205S | International Rectifier IRF3205S | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| IRF3205STRL | International Rectifier IRF3205STRL | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| IRF7105TR | International Rectifier IRF7105TR | 25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
| IRFL110 | International Rectifier IRFL110 | Trans MOSFET N-CH 100V 1.5A 4-Pin (3+Tab) SOT-223 |
| IRFL110PBF | International Rectifier IRFL110PBF | Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223 |
| IRFL110TRPBF | International Rectifier IRFL110TRPBF | Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
| IRFP31N50L | International Rectifier IRFP31N50L | Trans MOSFET N-CH 500V 31A 3-Pin(3+Tab) TO-247AC |
| IRFP31N50LPBF | International Rectifier IRFP31N50LPBF | Single-Gate MOSFET Transistors N-Chan 500V 31 Amp |
| IRLML2803PBF | International Rectifier IRLML2803PBF | MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Power dissipation: 540 mW |
| IRLML2803TR | International Rectifier IRLML2803TR | 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package |
| IRLML2803TRHR | International Rectifier IRLML2803TRHR | Trans Mosfet N-ch 30V 1.2A 3-PIN SOT-23 T/r |
| IRF4905PBF | IRF4905PBF | Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.02 Ohm; Id -74A; TO-220AB; Pd 200W; Vgs +/-20V |
| IRF540 | IRF540 | Mosfet N-ch 100V 22A TO-220 |
| IRF540A | IRF540A | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB Rail |
| IRF540APBF | IRF540APBF | |
| IRF540APBF-JSM | IRF540APBF-JSM | |
| IRF540APBF-VB | IRF540APBF-VB | N, 100V, 55A, Rds(on), 36M¦¸@10V, 38M¦¸@4.5V, 20VGS(¡ÀV), 2VTH(V) , TO220 , -, - |
| IRF540FI | IRF540FI | |
| IRF540FI-JSM | IRF540FI-JSM | |
| IRF540FI-VB | IRF540FI-VB | N—channelchannel, 100V, 50A, Rds(on), 40MΩ@10V, 48MΩ@4.5V, 20VGS(±V)；2~4VTH(V) ENCAPSULATION：TO220F |
| IRF540N | IRF540N | TO-220AB MOSFETs ROHS |
| IRF540N-HXY | IRF540N-HXY | |
| IRF540N-VB | IRF540N-VB | N, 100V, 55A, Rds(on), 36M¦¸@10V, 38M¦¸@4.5V, 20VGS(¡ÀV), 2VTH(V) , TO220 , -, - |
| IRF540NL-VB | IRF540NL-VB | TSMC wafer，JCET (Jiangsu Changjiang Electronics Technology)。TO262；NChannel；VDS=100V；ID... |
| IRF540NLPBF | IRF540NLPBF | Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-262; Pd 130W; Vgs +/-2 |
| IRF540NPBF | IRF540NPBF | Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-220AB; Pd 130W; -55DEG |
| IRF540NPBF транзистор | IRF540NPBF транзистор | |
| IRF540NPBF-JSM | IRF540NPBF-JSM | |
| IRF540NS | IRF540NS | |
| IRF540NS-VB | IRF540NS-VB | N Mosfet, Trench, 100V, 45A, Rds(on), 32M¦¸@10V, 34M¦¸@4.5V, 20VGS(¡ÀV), 2VTH(V) , TO263 |
| IRF540NSPBF | IRF540NSPBF | Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; D2PAK; Pd 130W; Vgs +/-20 |
| IRF540NSTRL | IRF540NSTRL | |
| IRF540NSTRLPBF | IRF540NSTRLPBF | Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel |
| IRF540NSTRLPBF транзистор | IRF540NSTRLPBF транзистор | |
| IRF540NSTRPBF | IRF540NSTRPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| IRF540NSTRPBF-JSM | IRF540NSTRPBF-JSM | |
| IRF540NSTRRPBF | IRF540NSTRRPBF | Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; D2PAK; Pd 130W; Vgs +/-20 |
| IRF540PBF | IRF540PBF | Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3 |
| IRF540PBF-JSM | IRF540PBF-JSM | |
| IRF540PBF-VB | IRF540PBF-VB | N, 100V, 55A, Rds(on), 36M¦¸@10V, 38M¦¸@4.5V, 20VGS(¡ÀV), 2VTH(V) , TO220 , -, - |
| IRF540S | IRF540S | N-channel TrenchMOS transistor | MOSFET N-CH 100V 28A D2PAK |
| IRF540S-VB | IRF540S-VB | N Mosfet, Trench, 100V, 45A, Rds(on), 32M¦¸@10V, 34M¦¸@4.5V, 20VGS(¡ÀV), 2VTH(V) , TO263 |
| IRF540SPBF | IRF540SPBF | Single N-Channel 100 V 77 mOhms Surface Mount Power Mosfet - D2PAK-3 |
| IRF540STRLPBF | IRF540STRLPBF | Single N-Channel 100 V 77 mOhms Surface Mount Power Mosfet - D2PAK-3 |
| IRF540ZL | IRF540ZL | |
| IRF540ZLPBF | IRF540ZLPBF | Mosfet, Power; N-ch; Vdss 100V; Rds(on) 21MILLIOHMS; Id 36A; TO-262; Pd 92W; Vgs +/-20 |
| IRF540ZP | IRF540ZP | NChannel 100V 70A 18mΩ@10V TO220 |
| IRF540ZPBF | IRF540ZPBF | MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 21Milliohms; ID 36A; TO-220AB; PD 92W; gFS 36V |
| IRF540ZPBF-VB | IRF540ZPBF-VB | N, 100V, 70A, Rds(on), 17M¦¸@10V, 20VGS(¡ÀV), 3.7VTH(V) , TO220 |
| IRF540ZS | IRF540ZS | MOSFET N-CH 100V 36A D2PAK N-Channel 100 V 36A (Tc) 92W (Tc) Surface Mount D2PAK |
| IRF540ZSTRPBF | IRF540ZSTRPBF | N—channelchannel, 100V, 70A, Rds(on), 18MΩ@10V, 22MΩ@4.5V, 20VGS(±V)；2VTH(V) ENCAPSULATION：TO263 |
| IRF640SPBF | IRF640SPBF | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 |
| IRF640STRLPBF | IRF640STRLPBF | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 |
| IRF640STRLPBF-VB | IRF640STRLPBF-VB | N—channelchannel, 200V, 40A, Rds(on), 48MΩ@10V, 20VGS(±V)；3.3VTH(V) ENCAPSULATION：TO263 |
| IRF640STRRPBF | IRF640STRRPBF | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 |
| IRF7103TRPBF | IRF7103TRPBF | Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel |
| IRF7342TRPBF | IRF7342TRPBF | Mosfet, Power; Dual P-ch; Vdss -55V; Rds(on) 0.105 Ohm; Id -3.4A; SO-8; Pd 2W; Vgs +/-20 |
| IRF9540NPBF | IRF9540NPBF | Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3 |
| IRF9640SPBF | IRF9640SPBF | Single P-Channel 200 V 0.5 Ohms Surface Mount Power Mosfet - D2PAK-3 |
| IRF9640STRLPBF | IRF9640STRLPBF | Single P-Channel 200 V 0.5 Ohms Surface Mount Power Mosfet - D2PAK-3 |
| IRF9640STRLPBF-VB | IRF9640STRLPBF-VB | TSMC wafer，JCET (Jiangsu Changjiang Electronics Technology)。PChannel, -200V, -11A, RDS(ON), 0.50Ω@-10V, 20Vgs(±V);... |
| IRF9640STRPBF | IRF9640STRPBF | |
| IRF9640STRPBF-JSM | IRF9640STRPBF-JSM | |
| IRFR3806 | IRFR3806 | Power Field-Effect Transistor |
| IRL640S | IRL640S | Hexfet-r Power Mosfet | Mosfet N-ch 200V 17A D2PAK |
| IRL640S-VB | IRL640S-VB | N—channelchannel, 200V, 40A, Rds(on), 48MΩ@10V, 20VGS(±V)；3.3VTH(V) ENCAPSULATION：TO263 |
| IRL640SPBF | IRL640SPBF | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 |
| IRL640STRLPBF | IRL640STRLPBF | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 |
| IRL640STRLPBF-JSM | IRL640STRLPBF-JSM | |
| IRLML0030TRPBF | IRLML0030TRPBF | Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23 |
| IRLML2402 | IRLML2402 | Transistor: N-MOSFET; unipolar; 16V; 1.2A; 0.25ohm; 0.54W; -55+150 deg.C; SMD; SOT23 |
| IRLML2502G | IRLML2502G | SOT-23 MOSFETs ROHS |
| IRLML2502G-VB | IRLML2502G-VB | N—channelchannel, 20V, 6A, Rds(on), 24MΩ@4.5V, 33MΩ@2.5V, 8VGS(±V)；0.45~1VTH(V) ENCAPSULATION：SOT23-3 |
| IRLML2502GTRPBF | IRLML2502GTRPBF | N CH POWER MOSFET, HEXFET, 20V, 4.2A, MICRO3; Transistor Polarity: N Channel; Con |
| IRLML2502GTRPBF-JSM | IRLML2502GTRPBF-JSM | |
| IRLML2502GTRPBF-VB | IRLML2502GTRPBF-VB | 20V, 6A, Rds(on), 24M¦¸@4.5V, 33M¦¸@2.5V, 8VGS(¡ÀV), 0.45~1VTH(V) , SOT23-3 N , -- |
| IRLML2502TRPBF | IRLML2502TRPBF | Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23 |
| IRLML5103TRPBF | IRLML5103TRPBF | INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V |
| IRLML5203TRPBF | IRLML5203TRPBF | Mosfet, Power; P-ch; Vdss -30V; Rds(on) 98MILLIOHMS; Id -3A; MICRO3; Pd 1.25W; -55DEGC |
| IRLML6302TRPBF | IRLML6302TRPBF | Infineon Technologies P-channel HEXFET power MOSFET, -20 V, -780 mA, SOT-23, IRLML6302TRPBF |
| IRLML6344TRPBF | IRLML6344TRPBF | Transistor: N-MOSFET; unipolar; 30V; 5A; 29ohm; 1.3W; -55+150 deg.C; SMD; SOT23 |
| IRLML6344TRPBF-HXY | IRLML6344TRPBF-HXY | |
| IRLML6402 | IRLML6402 | 1.4W 12V 1.2V 7.8NC@ 4.5V 2INDIVIDUALPCHANNEL 20V 3.5Ω@5V, 200MA 3.7A 633PF@10V SOT-23 |
| IXFN110N85X | IXFN110N85X | Trans MOSFET N-CH 850V 110A 4-Pin SOT-227B |
| IXFN132N50P3 | IXFN132N50P3 | Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227 |
| IXFN140N30P | IXFN140N30P | Single N-Channel 300 Vds 24 mOhm 700 W Power Mosfet - SOT-227B |
| IXFN180N25T | IXFN180N25T | N-Channel 250 V 12.9 mOhm Power MosFet Surface Mount -SOT-227B |
| IXFN20N120P | IXFN20N120P | MOSFET N-CH 1200V 20A SOT-227B / N-Channel 1200 V 20A (Tc) 595W (Tc) Chassis Mount SOT-227B |
| IXFN210N20P | IXFN210N20P | Single N-Channel 200 V 1070 W 255 nC Polar HyPerFET Mosfet - TO-227B |
| IXFN210N30P3 | IXFN210N30P3 | Power Field-Effect Transistor, 192A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
| IXFN210N30X3 | IXFN210N30X3 | Mosfet N-Channel 300V 210A Chassis Mount SOT-227B (miniBLOC) |
| IXFN360N10T | IXFN360N10T | Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B |
| IXFN40N110Q3 | IXFN40N110Q3 | Mosfet N-ch 1100V 35A SOT-227B |
| IXFN420N10T | IXFN420N10T | Gen1 Series - 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options, SOT-227B, RoHS |
| IXFN66N85X | IXFN66N85X | MOSFET N-CH 850V 65A SOT227B / N-Channel 850 V 65A (Tc) 830W (Tc) Chassis Mount SOT-227B |
| JCS10N60CT-O-C-N-B-VB | JCS10N60CT-O-C-N-B-VB | N, 650V, 12A, Rds(on), 800M¦¸@10V, 20VGS(¡ÀV), 3.5VTH(V) , TO220 |
| JCS10N60FT-O-F-N-B-VB | JCS10N60FT-O-F-N-B-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 650V, 12A, RDS(ON), 680mΩ@10V, 30Vgs(±V),... |
| JCS10N60FT-VB | JCS10N60FT-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 650V, 12A, RDS(ON), 680mΩ@10V, 30Vgs(±V),... |
| JCS10N60T-VB | JCS10N60T-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 650V, 12A, RDS(ON), 680mΩ@10V, 30Vgs(±V),... |
| JCS10N65CT-O-C-N-B-VB | JCS10N65CT-O-C-N-B-VB | N, 650V, 12A, Rds(on), 800M¦¸@10V, 20VGS(¡ÀV), 3.5VTH(V) , TO220 |
| JCS10N65FT-O-F-N-B-VB | JCS10N65FT-O-F-N-B-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 650V, 10A, RDS(ON), 830mΩ@10V, 30Vgs(±V);... |
| JCS10N65FT-R-F-N-B-VB | JCS10N65FT-R-F-N-B-VB | 650V 10A 830mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS |
| JCS10N65FT-VB | JCS10N65FT-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 650V, 10A, RDS(ON), 830mΩ@10V, 30Vgs(±V);... |
| L2N7002DW1T1G | L2N7002DW1T1G | 380mW 20V 2V 50nC 2individualNChannel 60V 7.5Ω 115μA 1.2nF SC-88 SMD mount |
| L2N7002DW1T1G-MS | L2N7002DW1T1G-MS | SOT-363 , 2N@@(Vdss), 60V@@(Id), 300mA@@(Pd), 280mW@@(RDS(on)@Vgs, Id), 1.8¦¸@10V, 300mA |
| ME2N7002DW-VB | ME2N7002DW-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 60V, 0.3A, RDS(ON), 2000mΩ@4.5V, 4000mΩ@2.5V,... |
| MMFTP3401 | MMFTP3401 | Diotec Semiconductors P-channel MOSFET, -30 V, -4 A, SOT-23, MMFTP3401 |
| 2N3955A | NJS 2N3955A | |
| NTBLS0D8N08XTXG | NTBLS0D8N08XTXG | NTBL Series N-Channel 457A 325W Surface Mount Power Mosfet HPSOF-8 |
| NVMYS010N04CLTWG | NVMYS010N04CLTWG | Compliant Production (Last Updated: 2 years ago) ACTIVE (Last Updated: 2 years ago) |
| 2SK3412-TL-E | onsemi 2SK3412-TL-E | 2SK3412 - N-channel 4V Drive Series; |
| 2SK3415LS | onsemi 2SK3415LS | Trans MOSFET N-CH Si 60V 40A 3-Pin(3+Tab) TO-220FI |
| 2SK3449 | onsemi 2SK3449 | Trans MOSFET N-CH Si 60V 4.8A 3-Pin TO-126ML |
| 2SK3485-TD-E | onsemi 2SK3485-TD-E | Power MOSFET, N Channel, 20 V, 2.5 A, 0.11 ohm, SOT-89, Surface Mount |
| 2SK3487-TD-E | onsemi 2SK3487-TD-E | 2SK3487 - N-channel 2.5V Drive Series; |
| 2SK3491-E | onsemi 2SK3491-E | 2SK3491 - N-channel 4V Drive Series; |
| 2SK3491-TL-E | onsemi 2SK3491-TL-E | Power MOSFET, N Channel, 600 V, 1 A, 8.5 ohm, TO-251, Through Hole |
| 2SK3492-TL-E | onsemi 2SK3492-TL-E | Trans MOSFET N-CH Si 60V 8A 3-Pin(2+Tab) TP-FA |
| 2SK3495-AZ | onsemi 2SK3495-AZ | 2SK3495-AZ, Single Mosfets; |
| FDV301N | onsemi FDV301N | Transistor MOSFET N-Ch. 25V 220mA 0, 35W 4Ohm SOT23 FDV301N |
| FDY3000NZ | onsemi FDY3000NZ | Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 0.6A, 700mΩ |
| FQA32N20C | onsemi FQA32N20C | N-Channel Power MOSFET, QFET®, 200 V, 32 A, 82 mΩ, TO-3P |
| P100NF03L-03 | P100NF03L-03 | |
| P100NF03L-03-VB | P100NF03L-03-VB | N, 30V, 120A, Rds(on), 3M¦¸@10V, 4M¦¸@4.5V, 20VGS(¡ÀV), 1.7VTH(V) , TO220 |
| PMV65XPEA | PMV65XPEA | Small Signal Field-Effect Transistor |
| 2SK3402-AZ | Renesas 2SK3402-AZ | Trans MOSFET N-CH 60V 36A Automotive 3-Pin(3+Tab) TO-251 |
| 2SK3404-Z-E1-AZ | Renesas 2SK3404-Z-E1-AZ | Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-263 T/R |
| 2SK3404-Z-E2-AZ | Renesas 2SK3404-Z-E2-AZ | Switching N-Channel Power Mosfet |
| 2SK3408-T1B-A | Renesas 2SK3408-T1B-A | Renesas N-Channel Mos Field Effect Transistor For Switching |
| 2SK3431-AZ | Renesas 2SK3431-AZ | Trans MOSFET N-CH 40V 83A Automotive 3-Pin(3+Tab) TO-220AB |
| 2SK3433-ZJ-E1-AZ | Renesas 2SK3433-ZJ-E1-AZ | Switching N-Channel Power Mosfet |
| 2SK3435-AZ | Renesas 2SK3435-AZ | Nch Single Power MOSFET 60V 80A 14mohm MP-25/TO-220AB Automotive |
| 2SK3446TZ-E | Renesas 2SK3446TZ-E | Trans MOSFET N-CH Si 150V 1A 3-Pin TO-92 Mod Fan-Fold |
| 2SK3447TZ-E | Renesas 2SK3447TZ-E | Transistor MOSFET N-Channel 150V 1A 3-Pin SC-51 T/R |
| 2SK3455B-S17-AY | Renesas 2SK3455B-S17-AY | Transistor MOSFET N-Channel 500V 12A 3-Pin TO-220 Isolated Tube |
| 2SK3481(0)-Z-E1-AZ | Renesas 2SK3481(0)-Z-E1-AZ | Nch Single Power Mosfet 100V 30A 50Mohm Mp-25Z/To-220Smd |
| 2SK3483-AZ | Renesas 2SK3483-AZ | Trans MOSFET N-CH 100V 28A Automotive 3-Pin(3+Tab) TO-251 |
| 2SK3483-Z-AZ | Renesas 2SK3483-Z-AZ | Transistor MOSFET N-Channel 100V 28A 3-Pin TO-252 |
| 2SK3484-S16-AY | Renesas 2SK3484-S16-AY | Nch Single Power Mosfet 100V 16A 125Mohm Mp-3/To-251 |
| BSS88 | Rochester Electronics BSS88 | Trans Mosfet N-ch 240V 0.25A 3-PIN TO-92 T/r |
| S2N7002DW-VB | S2N7002DW-VB | TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 60V, 0.3A, RDS(ON), 2500mΩ@10V, 3200mΩ@4.5V,... |
| 2SK3486-TD-E | Sanyo 2SK3486-TD-E | Mosfet, N-ch, 20V, 10A, 33MOHM@4V, Pcp |
| SI2301-ZE | SI2301-ZE | |
| SI2301BDS-T1-E3 | SI2301BDS-T1-E3 | Transistor Mosfet P-ch 20V 2.2A 3-PIN SOT-23 T/r |
| SI2301CDS-T1-GE3 | SI2301CDS-T1-GE3 | P-ch Mosfet SOT-23 20V 112MOHM @ 4.5V - Lead(pb) And Halogen Free |
| SI2302-HXY | SI2302-HXY | |
| SI2302CDS-T1-GE3 | SI2302CDS-T1-GE3 | Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - SOT-23 |
О категории «Полевые МОП-транзисторы»
Полевые МОП-транзисторы (MOSFET) Infineon, Vishay, onsemi и VBsemi — около 350 позиций: N- и P-канальные, от милливаттных ключей в SOT-23 до силовых модулей в TO-247 на сотни ампер. Серии OptiMOS, StrongIRFET, SiHx в наличии и под заказ.
Основные критерии выбора — напряжение сток-исток (20–1200 В), сопротивление открытого канала Rds(on), заряд затвора и корпус. Для импульсных источников питания рекомендуем транзисторы с малым Qg, для линейных схем — с расширенной областью безопасной работы (SOA). Все характеристики — в таблицах на карточках, документация прилагается.